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IRFP26N60L, SiHFP26N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 61 85 Single
D
FEATURES
600 0.21
* Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications Requirements
Available
RoHS* * Lower Gate Charge Results in Simpler Drive COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free Available
TO-247
APPLICATIONS
G
* Zero Voltage Switching (SMPS) * Telecom and Server Power Supplies
S N-Channel MOSFET
S D G
* Uninterruptible Power Suplies * Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP26N60LPbF SiHFP26N60L-E3 IRFP26N60L SiHFP26N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 600 30 26 17 100 3.8 570 26 47 470 21 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1.7 mH, RG = 25 , IAS = 26 A, dV/dt = 21 V/ns (see fig. 12). c. ISD 26 A, dI/dt 480 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91218 S-81264-Rev. B, 21-Jul-08 www.vishay.com 1
IRFP26N60L, SiHFP26N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.27 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time IS ISM VSD trr Qrr IRRM ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss eff. Coss eff. (ER) Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 16 Ab VDS = 50 V, ID = 16 A
600 3.0 13 -
0.33 0.21 5020 450 34 230 170 31 110 47 42
5.0 100 50 2.0 0.25 180 61 85 -
V V/C V nA A mA S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V VDS = 0 V to 480 Vc
pF
-
VGS = 10 V
ID = 26 A, VDS = 480 V, see fig. 7 and 15b
-
nC
VDD = 300 V, ID = 26 A, RG = 4.3 ,VGS = 10 V see fig. 11a and 11bb
-
ns
-
170 210 670 1050 7.3
26 A 100 1.5 250 320 1000 1570 11 V ns nC A
G
S
TJ = 25 C, IS = 26 A, VGS = 0 Vb TJ = 25 C, IF = 26 A TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IF = 26 A, VGS = 0 Vb TJ = 125 C, dI/dt = 100 TJ = 25 C A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91218 S-81264-Rev. B, 21-Jul-08
IRFP26N60L, SiHFP26N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1000
Top VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
1000.00
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
Bottom
100.00
10
TJ = 150 C 10.00 TJ = 25 C 1.00
1
0.1
5.5 V 20 s PULSE WIDTH TJ = 25 C
0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
0.10 2.0
VDS = 50 V 20 s PULSE WIDTH 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance (Normalized)
100
Top
ID, Drain-to-Source Current (A)
10
VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom 5.5 V
3.0
ID = 26 A VGS = 10 V
2.5
2.0
5.5 V
1.5
1
1.0
0.1 0.1 1
20 s PULSE WIDTH TJ = 150 C 10 100
0.5 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91218 S-81264-Rev. B, 21-Jul-08
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IRFP26N60L, SiHFP26N60L
Vishay Siliconix
1000000 12.0 VGS = 0 V, Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd Ciss f = 1 MHz SHORTED VGS, Gate-to-Source Voltage (V) 10.0
ID = 26 A VDS = 480 V VDS = 300 V VDS = 120 V
10000 C, Capacitance (pF)
8.0
1000 Coss 100
6.0
4.0
2.0 Crss 10 1 10 100 1000 0.0 0 25 100 50 75 QG, Total Gate Charge (nC) 125 150
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
30
1000.00
ISD, Reverse Drain Current (A)
25
100.00 TJ = 150 C 10.00
20 Energy (J)
15
10
1.00
TJ = 25 C
5 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0 0 100 200 300 400 500 600 700 VDS, Drain-to-Source Voltage (V)
0.10
VSD, Source-to-Drain Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs.VDS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91218 S-81264-Rev. B, 21-Jul-08
IRFP26N60L, SiHFP26N60L
Vishay Siliconix
1000 OPERATING IN THIS AREA LIMITED BY RDS(on)
30
25 100 ID, Drain Current (A) ID, Drain Current (A) 10000 20
10
100 sec
15
10
1 TC = 25 C TJ = 150 C Single Pulse 1 10 100
1 msec 5 10 msec 0 1000 25 50 75 100 125 150 VDS, Drain-to-Source Voltage (V) TC, Case Temperature (C)
0.1
Fig. 9a - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
VDS VGS RG
RD
VDS 90 %
D.U.T. + - VDD
10 V
Pulse width 1 s Duty factor 0.1 %
10 % VGS td(on) tr td(off) tf
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
1
Thermal Response (ZthJC)
0.1
D = 0.50 0.20 0.10
0.01
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) PDM
t1
0.001
t2
0.0001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC
0.1
1
t , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91218 S-81264-Rev. B, 21-Jul-08
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IRFP26N60L, SiHFP26N60L
Vishay Siliconix
1050 EAS, Single Pulse Avalanche Energy (mJ) TOP 900 BOTTOM 750 ID 12 A 16 A 26 A
6.0
VGS(th), Gate threshold Voltage (V)
5.0
600 450 300
4.0 ID = 250 A
3.0
150 0
2.0 -75 -50 50 -25 0 75 25 TJ, Temperature (C) 100 125 150
25
50
75
100
125
150
Starting TJ, Junction Temperature (C)
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 14c - Maximum Avalanche Energy vs. Drain Current
15 V VGS V L Driver QGS
QG
VDS
QGD
RG 20 V tp
D.U.T IAS 0.01
VG
+ A - VDD
Charge
Fig. 15a - Basic Gate Charge Waveform
Fig. 14a - Unclamped Inductive Test Circuit
Current regulator Same type as D.U.T.
VDS
50 k
tp
12 V
0.2 F 0.3 F
+
D.U.T. VGS
-
VDS
IAS
3 mA
IG ID Current sampling resistors
Fig. 14b - Unclamped Inductive Waveforms
Fig. 15b - Gate Charge Test Circuit
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Document Number: 91218 S-81264-Rev. B, 21-Jul-08
IRFP26N60L, SiHFP26N60L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode
forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91218.
Document Number: 91218 S-81264-Rev. B, 21-Jul-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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